1996. 9. 6 1/4 semiconductor technical data KTC3193 epitaxial planar npn transistor revision no : 1 high frequency application. hf, vhf band amplifier application. feature high power gain : g pe =30db(typ.) (f=10.7mhz). recommended for fm if, osc stage and am conv, if stage. maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification r:40 80 , o:70 140 , y:120 240 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 1.0 a dc current gain h fe (note) v ce =12v, i c =2ma 40 - 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =1ma 100 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.2 pf collector-base time constant c c rbb / v ce =10v, i e =-1ma, f=30mhz 10 - 50 ps power gain g pe v cc =6v, i e =-1ma, f=10.7mhz (fig.) 27 29 33 db
1996. 9. 6 2/4 KTC3193 revision no : 1 input r =50 ? g 0.05uf 2.2k ? 0.05uf 1k ? i e 12pf 30pf cc v 0.05uf 3 2 1 4 5 t output r =50 ? l t : 0.1mm uew 20t 1 - 2 3 - 2 0.1mm uew 8t 5 - 4 0.1mm uew 2t y parameters (typ.) (1) (common emitter f=455khz, ta=25 1 ) characteristic symbol KTC3193-r KTC3193-o KTC3193-y unit collector-emitter voltage v ce 6 6 6 v emitter current i e -1 -1 -1 ma input conductance g ie 0.58 0.41 0.26 ms input capacitance c ie 53 46 38 pf output conductance g oe 1.9 2.7 4.8 s output capacitance c oe 2.6 2.8 3.6 pf forward transfer admittance |y fe | 38 38 38 ms phase angle of forward transfer admittance fe -0.79 -0.83 -0.92 . reverse transfer admittance |y re | 5.7 5.7 6.2 s phase angle of reverse transfer admittance re -90 -90 -90 . (2) (common emitter f=10.7khz, ta=25 1 ) characteristic symbol KTC3193-r KTC3193-o KTC3193-y unit collector-emitter voltage v ce 6 6 6 v emitter current i e -1 -1 -1 ma input conductance g ie 1.04 0.85 0.65 ms input capacitance c ie 49 43 36 pf output conductance g oe 10 15 28 s output capacitance c oe 2.7 2.9 3.6 pf forward transfer admittance |y fe | 37 37 37 ms phase angle of forward transfer admittance fe -9.6 -10.4 -11.5 . reverse transfer admittance |y re | 120 120 140 s phase angle of reverse transfer admittance re -90 -90 -90 . fig. g pe test circuit
1996. 9. 6 3/4 KTC3193 revision no : 1 y - v ce collector-emitter voltage v (v) 1 3 10 30 30 re 1 reverse transfer admittance 10 50 500 30 10 3 1 collector-emitter voltage v (v) ce re ce y - v re ce y - v re ce y ( s) 5 3 5 common emitter i =-1ma f=455khz =-90 ta=25 c e re y r, o reverse transfer admittance 5 100 300 e f=10.7mhz i =-1ma common emitter y r, o re y ( s) =-90 ta=25 c re ce fe y , - v fe e fe y , - i fe e fe y , - i fe y (ms) fe forward transfer admittance y (ms) fe forward transfer admittance y ( s) fe reverse transfer admittance reverse transfer admittance re y ( s) phase angle of forward transfer fe admittance ( ) phase angle of forward transfer fe admittance ( ) phase angle of forward transfer fe admittance ( ) 50 30 1k -10 -3 -0.3 -0.1 emitter current i (ma) e -1 100 common emitter v =6v f=10.7mhz ta=25 c ce y re 300 500 re y, o, r y, o, r -500 -300 -100 -1k -30 -50 ce ta=25 c f=10.7mhz v =6v common emitter 10 -1 e emitter current i (ma) -0.1 -0.3 -3 -10 100 2 3 5 30 50 -50 -30 -5 -3 -2 -100 -10 fe y fe y, o, r y o r r, o y re =-90 ce ta=25 c f=455khz v =6v common emitter 5 3 -0.5 emitter current i (ma) e 1 10 -3 -1 -0.3 -0.1 collector-emitter voltage v (v) ce fe e ta=25 c f=10.7mhz i =-1ma common emitter 50 30 5 20 300 30 10 3 1 -2 -3 -5 -30 -10 r, o, y y o r y fe 100
1996. 9. 6 4/4 KTC3193 revision no : 1 10 -0.5 100 -5 -3 -0.3 -0.1 emitter current i (ma) e y (ms) fe y (m ) fe e fe y , - i fe ce fe y , - v fe phase angle of forward transfer forward transfer admittance -1 -0.5 30 50 common emitter v =6v f=455khz ta=25 c ce r, o, y y o r y fe fe -5 -3 -10 -5 -1 fe admittance ( ) phase angle of forward transfer fe admittance ( ) collector-emitter voltage v (v) ce forward transfer admittance fe e ta=25 c f=455khz i =-1ma common emitter 50 30 5 20 300 30 10 3 1 -0.2 -0.3 -0.5 -3 -1 r, o, y y o r 100 y fe ?
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